Recombination processes in InxGa1-xN light-emitting diodes studied through optically detected magnetic resonance
Identifieur interne : 015950 ( Main/Repository ); précédent : 015949; suivant : 015951Recombination processes in InxGa1-xN light-emitting diodes studied through optically detected magnetic resonance
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Abstract
Optically detected magnetic resonance (ODMR) has been observed on photoluminescence from InGaN light-emitting diodes (LEDs) under low photoexcitation conditions. The samples have the usual p-i-n structure but without etching or metallizations. Distinct ODMR features from the recombining electron and hole are found with strength that indicates significant charge separation and long lifetimes (>100 ns). The electron and hole g tensors are determined for green and extra-blue LEDs. The recombination is assigned to electrons in the InGaN quantum well (QW) and holes either bound at Mg acceptors outside the well or localized at potential minima in the QW but spatially separated from the electrons. © 1998 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Recombination processes in In<sub>x</sub>Ga<sub>1-x</sub>N light-emitting diodes studied through optically detected magnetic resonance</title><author><name sortKey="Glaser, E R" uniqKey="Glaser E">E. R. Glaser</name><affiliation><inist:fA14 i1="01"><s1>Naval Research Laboratory, Washington, DC 20375-5347</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Minnesota</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis</wicri:cityArea></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan</s1></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774</wicri:regionArea><wicri:noRegion>Tokushima 774</wicri:noRegion></affiliation></author><author><name sortKey="Kennedy, T A" uniqKey="Kennedy T">T. A. Kennedy</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Naval Research Laboratory, Washington, DC 20375-5347</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">District de Columbia</region></placeName><wicri:cityArea>Naval Research Laboratory, Washington</wicri:cityArea></affiliation></author><author><name sortKey="Carlos, W E" uniqKey="Carlos W">W. E. Carlos</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Naval Research Laboratory, Washington, DC 20375-5347</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">District de Columbia</region></placeName><wicri:cityArea>Naval Research Laboratory, Washington</wicri:cityArea></affiliation></author><author><name sortKey="Ruden, P P" uniqKey="Ruden P">P. P. Ruden</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Naval Research Laboratory, Washington, DC 20375-5347</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">District de Columbia</region></placeName><wicri:cityArea>Naval Research Laboratory, Washington</wicri:cityArea></affiliation></author><author><name sortKey="Nakamura, S" uniqKey="Nakamura S">S. Nakamura</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Naval Research Laboratory, Washington, DC 20375-5347</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">District de Columbia</region></placeName><wicri:cityArea>Naval Research Laboratory, Washington</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">98-0495492</idno><date when="1998-11-23">1998-11-23</date><idno type="stanalyst">PASCAL 98-0495492 AIP</idno><idno type="RBID">Pascal:98-0495492</idno><idno type="wicri:Area/Main/Corpus">016040</idno><idno type="wicri:Area/Main/Repository">015950</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electron-hole recombination</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Light emitting diodes</term><term>Microwave-optical double resonance</term><term>Photoluminescence</term><term>Wide band gap semiconductors</term><term>g-factor</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7361E</term><term>7350G</term><term>8560J</term><term>7670H</term><term>7855C</term><term>7866F</term><term>7320H</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Diode électroluminescente</term><term>Double résonance hyperfréquence optique</term><term>Photoluminescence</term><term>Recombinaison électron trou</term><term>Facteur g</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Optically detected magnetic resonance (ODMR) has been observed on photoluminescence from InGaN light-emitting diodes (LEDs) under low photoexcitation conditions. The samples have the usual p-i-n structure but without etching or metallizations. Distinct ODMR features from the recombining electron and hole are found with strength that indicates significant charge separation and long lifetimes (>100 ns). The electron and hole g tensors are determined for green and extra-blue LEDs. The recombination is assigned to electrons in the InGaN quantum well (QW) and holes either bound at Mg acceptors outside the well or localized at potential minima in the QW but spatially separated from the electrons. © 1998 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>73</s2></fA05><fA06><s2>21</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Recombination processes in In<sub>x</sub>Ga<sub>1-x</sub>N light-emitting diodes studied through optically detected magnetic resonance</s1></fA08><fA11 i1="01" i2="1"><s1>GLASER (E. R.)</s1></fA11><fA11 i1="02" i2="1"><s1>KENNEDY (T. A.)</s1></fA11><fA11 i1="03" i2="1"><s1>CARLOS (W. E.)</s1></fA11><fA11 i1="04" i2="1"><s1>RUDEN (P. P.)</s1></fA11><fA11 i1="05" i2="1"><s1>NAKAMURA (S.)</s1></fA11><fA14 i1="01"><s1>Naval Research Laboratory, Washington, DC 20375-5347</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455</s1></fA14><fA14 i1="03"><s1>Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan</s1></fA14><fA20><s1>3123-3125</s1></fA20><fA21><s1>1998-11-23</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 1998 American Institute of Physics. 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